A. A. Apostolakopoulos

Influence of isovalent dopants on vacancy–oxygen–hydrogen defects in silicon

The vacancy–oxygen (VOi) center is an important defect in Si, introducing energy levels within the bandgap and acting as a recombination center that degrades device performance. Hydrogen can passivate the VOi center, forming defects such as VOiHi, which modify the electronic structure and produce characteristic infrare...