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A. Tamura

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Oct 2026

Impact of oxidation conditions in SiO2 atomic layer deposition on interface state densities at β -Ga2O3 (001) MOS interfaces with 600 °C post-deposition annealing

We investigated the impact of SiO2 film deposition conditions in either thermal or plasma-enhanced atomic layer depositions (ALDs) on the interface characteristics of β-Ga2O3 metal–oxide–semiconductor (MOS) capacitors, especially focusing on oxidation reaction conditions in ALD. The formation of the interface with an i...

A. Tamura, Koji Kita · 0 citations

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