Open access
Sep 2026
Interfacial Oxidation Unlocks Degenerate n-Doping in Monolayer MoS2.
Recent advances in interface engineering have overcome high contact resistance in 2D semiconductor devices by modifying band alignment and carrier density of transition metal dichalcogenide contacts, including through group-V semimetals and charge-transfer doping. Combining photoelectron spectroscopy, diffraction, and...
M. Bianchi, D. Lizzit, Alberto Turoldo et al.
· Nano letters (Print) · 1 citation