Large switchable photogalvanic effect and tunable spin transport in sliding ferroelectric bilayer SiC nanoribbons
The photogalvanic effect (PGE) in ferroelectric materials holds great promise for nonvolatile memory and spintronic devices. Nevertheless, it remains challenging to acquire ferroelectric nanoribbons that concurrently exhibit prominent visible-light response, high PGE intensity, and a large switchable ratio. Herein, we...