Low hole mobility, strong hole trapping, and self-compensation effects limit the achievement of stable p-type conductivity in the β-Ga2O3 semiconductor, thereby inhibiting its application in advanced electronic devices. From a theoretical standpoint, the relatively flat nature of the valence band maximum (VBM) with d...
Thermal instability remains a fundamental bottleneck in oxide-based resistive random-access memory (RRAM), where elevated operating temperatures invariably increase the high-resistance-state (HRS) leakage current and collapse the ON/OFF switching window, severely limiting reliable deployment. Here, an Au/AgHfO3-x/Al2O3...
Swaraj Mukherjee, M. M. Ganaie, Ayan Chatterjee et al.· Materials Horizons· 0 citations
CuAlO2-based memristors exhibiting stable bipolar resistive switching, analog conductance modulation, and synaptic plasticity suitable for neuromorphic applications are demonstrated.
Ayan Chatterjee, M. M. Ganaie, Swaraj Mukherjee et al.· ACS Applied Materials and In...· 1 citation
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