Open access
Oct 2026
High-Performance Enhancement-Mode Ultra-thin ALD-Grown InWSnO Transistors Enabled by W/Sn Co-Engineering and Back-Channel Passivation
We report atomic layer deposition-grown indium–tungsten–tin oxide (IWTO) thin-film transistors that effectively circumvent the conventional on-current–threshold voltage (ION–VTH) trade-off in atomically thin oxide semiconductors. A W/Sn co-engineered IWTO channel is developed by systematically varying the W concentra...
Tsung-Che Chiang, Yi-De Tsai, Shi Guo et al.
· ACS Applied Electronic Mater... · 0 citations