Mechanism of low-stress and high-density SiO2 dielectric film deposition in TEOS/O2 PECVD: A multiscale simulation study
With the development of microelectronic devices toward higher integration and reliability, plasma-enhanced chemical vapor deposition (PECVD) SiO2 dielectric films play an important role in device insulation and surface passivation. However, the coupling and trade-off mechanism between film densification and residual st...