Open access
Nov 2026
Thick 4H-SiC-Based Schottky-Type Electron Detector for Fast Microscopy and Extended Sensitivity to Sub-keV
A defining trend in modern electron microscopy is the shift toward low-energy, low-current techniques to facilitate non-destructive, in-situ analysis at the frontiers of science. This work presents a novel strategy based on wide band-gap 4H-SiC for sensitive direct electron detection, featuring an ultra-thin Schottky e...
Ren-Jie Xu, Jie Jin, Lin Zhang et al.
· IEEE Electron Device Letters · 0 citations