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Open access 2026

Active Thermal Balancing Strategy for Direct Parallel Connection of SiC MOSFETs

silicon carbide (SiC) mosfets are increasingly favored in high-power density applications due to their superior thermal and electrical performance compared to Si-IGBTs. However, current ratings of individual SiC mosfet dies are limited, requiring multiple devices in parallel to meet high-current demands, as is typical...

Dimitrios Deldimos, F. Stella, Andrea Piccioni et al. · 0 citations

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