Fu-Fei An

Integration of high-κ oxide on 2D semiconductors with carbon-dot monolayer assembly as van der Waals interfacial layer

The atomically smooth surfaces of two-dimensional (2D) nanomaterials minimise scattering-induced carrier-transport degradation. However, this same attribute poses a major challenge for integrating 2D materials with high-quality dielectrics at sub-nanometre equivalent oxide thickness (EOT) through direct growth. Here we...