Author

H. Bluhm

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Preprint Aug 2026

Valley-Enabled Intrinsic Dresselhaus Spin-Orbit Coupling in Silicon

We develop a symmetry-based theory of spin-orbit-valley coupling in silicon that reveals an intrinsic source of Dresselhaus spin-orbit coupling independent of interfaces or external electric fields. Treating the valley degree of freedom as a symmetry-carrying quantum degree of freedom, we show that the Dresselhaus inte...

Johannes L. P. Steinschuld, H. Bluhm, L. R. Schreiber et al. · 0 citations

Preprint Aug 2026

Enhanced intrinsic spin-orbit driving of a Loss-DiVincenzo qubit near the spin-valley hotspot in Si/SiGe

In most Si/SiGe-based spin qubit implementations, high-fidelity single-qubit gates are achieved using micromagnets, which enable the use of electric spin dipole resonance via synthetic spin-orbit coupling (s-SOC). In contrast, intrinsic spin-orbit coupling (i-SOC) in silicon is generally considered to be weak. However,...

Alexander Willmes, Max Oberlander, Max Beer et al. · 0 citations

Preprint Sep 2026

Non-perturbative theory of valley splitting in Si qubits from variational wave function: periodic effects of shear strain and asymptotic freedom in the wiggle-well potential

Valley splitting sets the energy scale at which spin and valley degrees of freedom hybridize in silicon quantum-well qubits, but its sensitivity to interface structure makes it difficult to predict. Using the valleyor basis, we formulate a two-band effective-mass model for intervalley coupling in a finite quantum well...

Johannes L. P. Steinschuld, H. Bluhm, S. A. Jafari · 0 citations