Characterization of silicon carbide thin films deposited by PECVD and PLD for MEMS infrared applications
Silicon carbide (SiC) is a promising material for uncooled infrared (IR) Micro-Electro-Mechanical Systems (MEMS) owing to its high elastic modulus, thermal stability, and infrared absorption properties [1–3]. In this work, we report a comparative characterization of 500 nm thick SiC thin films deposited by Plasma-Enhan...