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Hadiuzzaman Syed

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Open access Sep 2026

Dynamic Transfer Characteristics Measurement Method for SiC MOSFETs at Realistic Drain Voltages

Transfer characteristics are essential for device modeling and circuit design in various applications. Transfer characteristics measurements for high voltage power devices are usually carried out in a curve tracer. Due to the limitation of the experimental setup, the pulse length is typically longer than $\mathbf{2 0 0...

Wen-Qi Zhou, Hadiuzzaman Syed, M. Horváth et al. · 0 citations

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