Open access
Sep 2026
Self-rectifying volatile memristor with ultrahigh rectification enabled by asymmetric oxide heterostructures
Volatile memristors hold promise for time-domain electronic functionalities beyond static memory, but their practical adoption is impeded by leakage currents, insufficient rectification, and unstable transient behaviors. Here, we report a self-rectifying volatile memristor based on a Pt/Ga2O3/indium gallium zinc oxide...
Peng-Tao Li, Zhe-Jia Zhang, Wen-Jue Zhou et al.
· Applied Physics Letters · 0 citations