Author

J. Bekaert

3 papers indexed here

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Sep 2026

Synthetic mask layout generation for machine learning-based OPC modeling in NA 0.33 EUV lithography

As NA 0.33 EUV lithography operates increasingly close to fundamental resolution limits, accurate and robust optical proximity correction (OPC) models become critical for advanced logic technology development. In early technology phases, OPC calibration is challenged by limited availability of real product layouts. To...

Ren-Yang Meng, Dong-Bo Xu, Po-Cheng Chen et al. · Photomask Japan · 0 citations

Sep 2026

Direct mask modelling for enhanced OPC accuracy in the era of curvilinear masks

As advanced techniques in Optical Proximity Correction (OPC), such as curvilinear OPC and inverse lithography technology, gain traction in production flows, the accuracy and robustness of compact OPC models become increasingly critical for advanced technology nodes. Traditional mask modeling approaches typically infer...

W. Gillijns, Ren-Yang Meng, B. Baskaran et al. · Photomask Japan · 1 citation

Review Sep 2026

Curvilinear mask metrology: toward standardizing contour-based metrics for EUV mask qualification

Curvilinear EUV mask layouts challenge conventional qualification because local geometry changes continuously along the contour. Sparse CD-style sampling can therefore miss or average out the regions that drive the measured response. We present a contour-based evaluation workflow using PMsite outputs and mask SEM data...

B. Baskaran, J. Bekaert, K. Miyaguchi et al. · Photomask Japan · 0 citations