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Author

J. Niroula

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Open access Sep 2026

Plasma-enhanced ALD growth of high breakdown field Ga2O3

This study investigates the structural, chemical, and dielectric properties of sub-20 nm Ga2O3 thin films grown by plasma-enhanced atomic layer deposition at 250 °C using triethylgallium and oxygen plasma. The as-deposited films are amorphous and exhibit sub-nanometer surface roughness on c-plane sapphire and Si (100)...

Dadam Kang, Loïs Talli, J. Niroula et al. · 0 citations

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