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Author

Kapil Gope

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Open access Aug 2026

Temperature-dependent evolution of the electronic structure in EuZn <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:msub> <mml:mi/> <mml:mn>2</mml:mn> </mml

Magnetoresistive materials have been tremendously important for the development of magnetic memory storage and spintronic devices. Recently, the antiferromagnetic EuX2Pn2 compounds, with X being a transition metal and Pn being a pnictogen, have seen intensive research interest due to their unusual anomalous Hall effect...

Milo X. Sprague, Anup Pradhan Sakhya, Barun Ghosh et al. · 0 citations

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