Author

Lain-Jong Li

2 papers indexed here

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Open access Oct 2026

Low contact resistance and high current density in ballistic p-type transistors based on oxygen-doped WSe2 monolayers

The development of high-performance p-type monolayer transistors is critical for extending two-dimensional (2D) semiconductors beyond silicon in sub 1-nm technology nodes for complementary metal–oxide–semiconductor (CMOS) circuits. However, insufficient doping and metal-induced gap states (MIGS) during metal deposition...

Lei-Fang Sun, Ting-Ting Gao, Lin Xu et al. · Nature Communications · 0 citations

Open access Aug 2026

Tunnel field-effect transistors exhibiting performance beyond the Boltzmann thermionic limit.

The International Roadmap for Devices and Systems (IRDS) has identified the tunnel field-effect transistor (TFET) as the most promising next-generation logic device that enables sustainable downscaling in driving voltage and power consumption. Demonstrating an acceptable sub-Boltzmann-limit ON current (namely I60, the...

Ze-Han Wu, Ke Yang, Wan-Qing Meng et al. · Science · 0 citations