Recent advances in interface engineering have overcome high contact resistance in 2D semiconductor devices by modifying band alignment and carrier density of transition metal dichalcogenide contacts, including through group-V semimetals and charge-transfer doping. Combining photoelectron spectroscopy, diffraction, and...
M. Bianchi, D. Lizzit, Alberto Turoldo et al.· Nano letters (Print)· 1 citation
The stability of supported metal nanoclusters, namely, their ability to preserve structure, composition, and catalytic activity over time, is a fundamental prerequisite for catalyst durability, resistance to deactivation, and long-term performance under operating conditions. Despite their often-exceptional intrinsic...
Gabriele Coltrioli, Deborah Perco, L. Sementa et al.· Journal of the American Chem...· 0 citations
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