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Author

M. Goswami

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Open access 2026

Robust 12T-NVRH SRAM: Integrating STT-MTJ for Nonvolatility and Radiation-Induced Soft-Error Resilience in 28 nm CMOS

This work introduces a 12-transistor nonvolatile radiation-hardened (12T-NVRH) SRAM cell in 28 nm CMOS that integrates spin-transfer torque-magnetic tunnel junctions with a self-recovering latch to achieve simultaneous nonvolatility and multinode resilience.

Sukhen Mondal, Ravi S. Siddanath, M. Goswami et al. · 0 citations

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