Unveiling Phosphorus Vacancy-Mediated Resistive Switching in Cu/HfO2/BP/Pt Memristors: Experimental and First-Principles Investigations
Memristors integrating 2D materials are promising for neuromorphic computing, yet their microscopic resistive switching mechanisms require further clarification. In this study, a Cu/HfO2/BP/Pt memristor was fabricated to investigate its electrical characteristics and conductive filament (CF) dynamics. The device exhi...