P. Hopkins

Impact of dislocation motion on interdiffusion, structuring, and thermal transport at Ge–Si heterointerface

The roles of dislocation motion and interdiffusion on the interfacial morphology and thermal properties of the Ge–Si interface were elucidated using transmission electron microscopy, energy dispersive x-ray spectroscopy, and thermoreflectance measurements. Epitaxial Ge thin films deposited on Si (001) substrates by mol...