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P. Périchon

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Open access Sep 2026

Faster Junction Temperature Estimation Incorporating Power SiC MOSFET Mismatch

Estimating the power semiconductor device junction temperature in high-power converters is critical to study their durability and monitor their degradation. This paper presents a faster simulation workflow and its application on a 12-SiC MOSFET single-phase power module for automotive traction inverter applications. Fi...

Raphaël Morvillier, R. Gwoziecki, Célestin Ott et al. · 0 citations

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