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R. Tetzlaff

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Sep 2026

PDR-Enabled Edge of Chaos in Locally Active Memristors and Their Oscillators

Locally active memristors (LAMs) biased in the edge of chaos (EOC) regime are conventionally characterized by negative differential resistance (NDR). However, based on the theory of local activity and EOC, we propose that NDR behavior constitutes a sufficient rather than a necessary condition for the emergence of the E...

Yu-Jiao Dong, Ming-Yu Guo, Yan Liang et al. · 0 citations

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