OBIRCH Hotspot Detection via MH-to-WL Biasing for 3D NAND Memory Hole Defect Isolation
In Flash semiconductor technology, NAND-type 3D Flash memory continues to stack up more Word-Line (WL) layers e.g. 2XX for 8th and 9th generation 3D NAND. The complexity of interconnect structures and the density of metal layers have increased dramatically. This evolution introduces new failure modes that are difficu...