Strained germanium ($\varepsilon$-Ge) quantum wells on metamorphic SiGe buffers have enabled advanced hole-based spin qubit devices. Alternatively, unstrained Ge with lattice-matched strained silicon-germanium ($\varepsilon$-SiGe) barriers eliminates the need for metamorphic buffers altogether. The ground state charact...
Edmondo Valvo, Davide Costa, Patrick Del Vecchio et al.· 1 citation· ⚡1
Hole spin qubits in semiconductor quantum dots (QDs) enable high-fidelity all-electric control, but conventional electric dipole spin resonance (EDSR) can require substantial rf drive power at the low magnetic fields that are favorable for qubit coherence and readout. In planar Ge hole spin qubits, this can reach -27 d...
A. Orekhov, Wonjin Jang, Pan-Ye Zhang et al.· 0 citations
It is shown that edge symmetries can be exploited to design syndrome-extraction circuits from the underlying components, rather than from the full quantum code, to produce depth-optimal circuits from the underlying components.
M. Nguyen, M. Rimbach-Russ, S. Bosco· 1 citation· ⚡1
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