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S. Kim

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Oct 2026

High-mobility enhancement-mode thin-film transistors with 1.5 nm-thick ALD-grown Sn-doped In2O3 channels

Aggressive channel thickness scaling to the sub-2 nm regime is essential for strengthening electrostatic gate control in monolithic three-dimensional electronics, but it causes severe carrier depletion and transport degradation in In2O3 thin-film transistors (TFTs). Here, we demonstrate enhancement-mode TFTs with 1.5 n...

Seung Ho Ryu, S. Kim, Taikyu Kim et al. · 0 citations

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