Open access
Aug 2026
Electrical transport and low-frequency noise in MoS2 field-effect transistors under controlled gas atmospheres
Two-dimensional semiconductors, and particularly MoS2, are promising active materials for room-temperature gas sensing devices because their channel conductance is strongly modulated by surface adsorption. Here we report a systematic study of the electrical transport properties of back-gated MoS2 field-effect transisto...
F. Giubileo, Carlo Barone, M. Passacantando et al.
· Nano Express · 1 citation