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Scott B. Clendenning

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Open access Oct 2026

Effects of Deposition Temperature on the Microstructure and Electrical Properties of 50 nm High-k BaTiO3 MIM Capacitors Fabricated by Atomic Layer Deposition

Thermal atomic layer deposition (ALD) of BaTiO3 (BTO) is of interest for next-generation microelectronic devices, including RAM and NAND memory. Herein, we investigate the influence of deposition temperature on the microstructure and electronic properties of 50 nm BTO thin films fabricated by ALD at 200, 220, 240, an...

Jia-Yi Chen, Ze-Kai Wang, Meng-Kun Tian et al. · 0 citations

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