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Author

Seong Keun Kim

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2 papers indexed here

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Oct 2026

High-mobility enhancement-mode thin-film transistors with 1.5 nm-thick ALD-grown Sn-doped In2O3 channels

Aggressive channel thickness scaling to the sub-2 nm regime is essential for strengthening electrostatic gate control in monolithic three-dimensional electronics, but it causes severe carrier depletion and transport degradation in In2O3 thin-film transistors (TFTs). Here, we demonstrate enhancement-mode TFTs with 1.5 n...

Seung Ho Ryu, S. Kim, Taikyu Kim et al. · 0 citations
Open access Aug 2026

Interface-Engineered Hafnia–MoS2 Ferroelectric Field-Effect Transistors Enabling a Nearly Ideal Memory Window with Back-End-of-Line Compatibility

Two-dimensional (2D) semiconductors, with their atomically thin geometry and excellent electrostatic control, are promising channel materials for ferroelectric field-effect transistors (FeFETs). However, integrating high-quality ferroelectric gate stacks onto these ultrathin channels in a manner compatible with modern...

Jaeho Lee, Jihoon Jeon, Jeonglyul Kim et al. · 0 citations

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