Chemical Mechanical Polishing of the C-Face of 6H-SiC and Mechanisms Elucidated by Reactive Force Field Molecular Dynamics
Due to its strong Si–C covalent bonds, high hardness, and strong chemical inertness, single-crystal SiC still faces challenges in chemical mechanical polishing (CMP), including low material removal rates, difficulty in controlling surface and subsurface damage, and an unclear understanding of the chemical–mechanical...