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Author

Shu-Jui Chang

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Open access Oct 2026

Dielectric Engineering for Sub-Nanometer Equivalent Oxide Thickness in Double-Gate WS2-FETs Using All-ALD-HfO2/ h -AlN Gate Stacks

This study reports a gate stack composed of an ultrathin epitaxial hexagonal aluminum nitride (h-AlN) interfacial layer (IL) deposited by plasma-enhanced atomic layer deposition (PEALD) between hafnium oxide (HfO2) and a monolayer tungsten disulfide (WS2) channel. The inherently inert surfaces of two-dimensional (2D)...

Shin-Yuan Wang, Shu-Jui Chang, Yu-Che Huang et al. · 0 citations
Open access Aug 2026

Guiding Orthorhombic Phase Evolution in Ultrathin (<4 nm) Hf0.5Zr0.5O2 on Germanium.

The integration of scalable, high-performance Hf0.5Zr0.5O2 (HZO) ferroelectric materials with high-mobility channels such as germanium is critical for next-generation logic and memory devices. However, maintaining robust ferroelectricity in films thinner than 5 nm remains a major challenge. In this study, we systematic...

Jer-Fu Wang, Shu-Jui Chang, Yu-Tsung Liao et al. · 0 citations

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