Interfacial control for temperature-driven hysteresis crossover in MoS2 ionotronic field-effect transistors for memory application
Ionotronic two-dimensional (2D) field-effect transistors (FETs) have opened new pathways for modulating electronic transport by coupling of ionic and electronic degrees of freedom, giving rise to tunable hysteresis dynamics. However, achieving precise control over temperature-dependent hysteresis remains a task due to...