Lead-Free FABi3I10 Self-Rectifying Memristors for In-Memory Security and Reservoir Computing
Sneak-path leakage blocks large-scale passive memristor crossbar integration, making rectifying memristors essential to address this bottleneck. Herein, we develop a self-rectifying memristor (SRM) with an Ag/FABi3I10/ITO device architecture based on FABi3I10 active layers. Because of the regulatory effect of the spo...