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W. Rohouma

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Review Open access Aug 2026

A Comprehensive Review of MOSFET Switching Loss Modelling Techniques for Power Electronic Converters

This paper reviews and discusses the behavioural modelling techniques used to simulate the dynamic behaviour of switching metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs) employed in power electronic converters. It is necessary to develop efficient, accurate an...

Ahmed Darwish, W. Rohouma · 0 citations

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