Sep 2026
Synthetic mask layout generation for machine learning-based OPC modeling in NA 0.33 EUV lithography
As NA 0.33 EUV lithography operates increasingly close to fundamental resolution limits, accurate and robust optical proximity correction (OPC) models become critical for advanced logic technology development. In early technology phases, OPC calibration is challenged by limited availability of real product layouts. To...
Ren-Yang Meng, Dong-Bo Xu, Po-Cheng Chen et al.
· Photomask Japan · 0 citations