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Yu-Chin Lin

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Open access Oct 2026

Dielectric Engineering for Sub-Nanometer Equivalent Oxide Thickness in Double-Gate WS2-FETs Using All-ALD-HfO2/ h -AlN Gate Stacks

This study reports a gate stack composed of an ultrathin epitaxial hexagonal aluminum nitride (h-AlN) interfacial layer (IL) deposited by plasma-enhanced atomic layer deposition (PEALD) between hafnium oxide (HfO2) and a monolayer tungsten disulfide (WS2) channel. The inherently inert surfaces of two-dimensional (2D)...

Shin-Yuan Wang, Shu-Jui Chang, Yu-Che Huang et al. · 0 citations

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