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Zhi-Zhuo Huang

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Nov 2026

Mechanism of low-stress and high-density SiO2 dielectric film deposition in TEOS/O2 PECVD: A multiscale simulation study

With the development of microelectronic devices toward higher integration and reliability, plasma-enhanced chemical vapor deposition (PECVD) SiO2 dielectric films play an important role in device insulation and surface passivation. However, the coupling and trade-off mechanism between film densification and residual st...

Yong-Kun Wang, Ding Xia, Wen-Long Song et al. · 0 citations

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