Zhong-Ri Huang

High-Sensitivity Optical Scattering Inspection Method for Nanoscale Morphological Defects on SiC Wafers

Silicon carbide (SiC) has emerged as a critical wide-bandgap semiconductor for power electronics. However, its high optical transmittance and relatively low dielectric contrast impose fundamental limitations on nanoscale defect detection compared with conventional silicon (Si) wafers. In this work, a numerical framewor...