2D Ferroelectrics: Toward Non‐Volatile Memory and Neuromorphic Computing

Abstract

With the rapid development of Artificial Intelligence and Internet of Things technologies, the demand for massive data storage and complex intelligent computing has surged dramatically. Two‐dimensional (2D) ferroelectrics, with the unique spontaneous polarization, atomic‐scale thickness, low power consumption, and flexible stacking, are driving the development of non‐volatile storage and neuromorphic computing toward ultra‐highenergy efficiency and high‐density integration. Here, we review the recent progress in 2D ferroelectrics and their applications. First, we analyze in‐depth the ferroelectric origins and progress of displacement‐type, sliding‐type, and defect‐type 2D ferroelectrics. Subsequently, the types, operating mechanisms, and non‐volatile memory performances of ferroelectric memory are summarized. Furthermore, we highlight the applications of 2D ferroelectric devices in neuromorphic computing, systematically summarizing research progress in synaptic plasticity simulation, biological neural behavior demonstration, and image recognition. Finally, the opportunities and challenges of 2D ferroelectrics and devices are discussed. This review provides guidance to researchers of 2D ferroelectrics who aim to push the frontier forward.