Aug 2026· Nano letters (Print)· Vol 26 32, pp.
10851-10857
· 0 citations· 37 references
Medicine
Abstract
Floating-gate memory, as one of the most widely used nonvolatile memories for practical deployments, plays a significant role in modern electronics. However, its inherent speed limitations make it challenging to keep pace with the explosive growth of data generation and the evolving demands of innovative hardware applications. Herein, we demonstrate an ultrafast floating-gate memory based on a two-dimensional (2D) MoS2/h-BN/graphene/CuInP2S6 heterostructured device. Comprehensive experimental investigations and technology computer-aided design (TCAD) simulations reveal that the matched ferroelectric polarization field of CuInP2S6 enhances the electric field across the tunneling layer, thereby effectively facilitating Fowler-Nordheim tunneling. This enables program/erase speeds as low as 13 ns, a performance competitive with that of dynamic random access memory (DRAM) that boasts high operational speeds but suffers from volatility. Our findings demonstrate the enormous potential of ferroelectric-enhanced floating-gate memory for next-generation high-speed nonvolatile memory and cutting-edge hardware applications.
Scalable memory systems that satisfy the temperature, speed, and energy requirements of cryogenic environments are essential for the development of large-scale quantum computers. They may also benefit high-performance computing and space applications. However, existing cryogenic memory technologies often suffer from li...
Ferroelectric memories have emerged as promising candidates for nonvolatile memory and neuromorphic computing owing to their capability for direct channel modulation through polarization switching. However, the high thermal budget required for synthesis and post-annealing processes hampers scalable integration and degr...
Song Zhao, Ming-Chun Zheng, Feng-Shou Yang et al.· Advances in Materials· 0 citations
The growing demands of artificial intelligence hardware have exposed a fundamental latency bottleneck in conventional floating-gate memory arrays. Although two-dimensional (2D) floating-gate memories have achievd nanosecond-level operations, their large-scale integration remains hindered by the scalability issues o...
Contemporary memory technologies are increasingly constrained by the fundamental trilemma of storage capacity, access latency, and power consumption. Among the emerging technologies, spin-orbit torque magnetic random-access memory (SOT-MRAM) shows promise to circumvent these challenges, owing to its fast switching dyna...
Ding-Gui Zeng, Yang Gao, Jin-Yu Duan et al.· 0 citations
High-density and fast-speed memory are greatly demanded for information storage and processing in the artificial intelligence era. Two-dimensional (2D) sliding-ferroelectrics (FEs) offer a transformative path for these applications, yet research has remained limited to a few materials. In this work, we report an integr...
Ferroelectric memristors are promising candidates for neuromorphic computing, yet their practical application is hindered by the trade-off between the volatile synaptic plasticity required for learning and the nonvolatile retention needed for long-term data storage. Here, we demonstrate a ferroelectric memristor based...
I. Margolin, I. Savichev, A. Chouprik· Applied Physics Letters· 0 citations
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