Thermal Field Regulation via Porous Graphite Plates for SiC Crystal Growth in a novel Resistance Furnace
Dan Liu
Wei-Tian Li
Xue-Chao Liu
Shaoyi Jiang
Zhiyong Wang
Mingao Ding
Yunzhou Xue
Shaolong He
K. Nandakumar
Jian-Chao Gong
Rong-Bing Li
Ying Wang
Pan Gao
Abstract
Silicon carbide (SiC) is an ideal material for next-generation radio frequency (RF) and power devices. The resistance heating physical vapor transport (PVT) method, owing to its high thermal field stability,...