Correlation of zinc oxide (ZnO) thin film fabrication and interface functionality by novel electrostatic spray deposition

Abstract

In this work, the growth mechanism of ZnO thin films by electrostatic spray deposition technique (ESD) is studied by taking into account the influence of annealing temperatures on the structural and mechanical features, and the mixing role of dilute water (H 2 O)-doped conditions in the precursor solution. ZnO is a promising material for transparent conducting oxide, and a fascinating family compound of optoelectronic materials that improve efficiency when utilized as transport layers in perovskite light-emitting diodes and semiconductor applications. X-ray diffraction (XRD) confirmed the crystallographic orientations of planes (100), (002), (101), (102) and (110). The superintendence of the morphological characteristics was performed by scanning electron microscopy (SEM) measurements. The degree of contamination was further assessed using very effective secondary ion mass spectrometry (SIMS). The XRD spectra were analyzed to determine the average crystallite sizes, which are related to the mechanical and structural profile, and compared using efficient models: The Debye–Scherrer (DSM) and the Williamson–Hall (WH) approach. The NiO/ZnO:H 2 O heterojunction photodetector has been found to sense a weak diode feature with post-annealing temperatures. The diode characteristics exhibited an ideality factor of 4.9[Formula: see text]for 45[Formula: see text]min annealed samples. The results showed that the ESD approach provides a possible feasible fabrication path for semiconductor research.