Dual-ferroelectric stacked high-performance field-effect transistor

Abstract

Ferroelectric transistors have the potential to meet the computing demands of data-intensive applications such as artificial intelligence. However, the existing research lacks functional reconfigurability and multi-task parallel processing capability. Here, we report a dual-ferroelectric stacked transistor that operates through opto-electric dual-mode induced ferroelectric polarization reversal, which features configurable multi-mode functionality encompassing electronic storage, multi-level optical memory, and visual functional emulation. The dual-ferroelectric architecture significantly enhances non-volatile memory performances, demonstrating an ultra-high current on/off ratio, ultra-low dark current and energy consumption, over 8-bit conductance states, multiple analog states and large dynamic range. Furthermore, the simulated artificial visual system enables multi-task parallel processing of static and motion mixed-color information. This work demonstrates that dual-ferroelectric stacked architecture holds potential in parallel processing of multidimensional information. The authors propose a dual-ferroelectric stacked field-effect transistor that enables synergistic improvements of memory and synaptic performance, demonstrating high-precision parallel processing capabilities in mixed-color image recognition tasks.