Performance Analysis and Material Optimization of the Graphene Interfacial Layer-based Lead-Free Perovskite Solar Cell

Abstract

Perovskite solar cells (PSCs) have advanced rapidly to become a key area of interest in photovoltaic research due to their superior optoelectronic qualities, inexpensive processing, mechanical flexibility, s calability, a nd n otable a dvancements in power conversion efficiency (PCE). H owever, t oxicity problems associated with lead-based absorbers, interface-related recombination, and stability issues continue to be major obstacles to commercialization. In this work, the performance of grapheneinterfaced PSC with methyl ammonium tin iodide (MASnI $_{3})$ as absorber material and $\mathbf{T i O}_{\mathbf{2}}$, PCBM, IGZO, CdS and $\mathbf{C}_{\mathbf{6 0}}$ as electron transport materials (ETMs) is simulated to determine the device with the best performance. The graphene interlayer, placed between the perovskite and hole transport material (HTM), is modeled as a high-mobility layer to reduce interfacial recombination and also improve device stability. The proposed optimized structure, Glass/FTO/IGZO/MASnI $_{3}$ /Gr/Cu $_{2} \mathrm{O} / \text{Au}$ had a theoretical PCE of 26.23%. Series and shunt resistance analyses were performed for the optimized device to verify the robustness of the simulated performance. For comparison, the same device configuration is a lso s imulated u sing M APbI $_{3}$ a s a bsorber. The study highlights the potential of MASnI $_{3}$ as a stable and ecofriendly absorber and the effectiveness of the graphene interlayer in improving overall device performance.