Emerging spin-orbitronics in van der Waals 2D semiconductors

Abstract

Harnessing multiple quantum degrees of freedom, including spin, valley, and orbital angular momentum, in van der Waals (vdW) semiconductors offers a compelling route beyond conventional charge-based electronics. This perspective examines the rapid rise of spin-orbitronics and orbitronics in two-dimensional (2D) semiconductors, focusing on black phosphorus (BP) and indium selenide (InSe) as representative platforms. BP serves as a unique paradigm for anisotropic spin-orbitronics; its puckered lattice enables highly directional spin transport and a predicted anisotropic orbital Hall effect without requiring strong intrinsic spin–orbit coupling. We discuss the realization of gate-tunable magnetic tunnel junctions using ferromagnetic Co-intercalated BP and highlight the critical role of “clean” indium-assisted vdW contacts in resolving intrinsic spin and orbital dynamics. Complementarily, InSe stands out as a premier candidate for gate-switchable Rashba physics, where electrically modulated inversion-symmetry breaking enables dynamic tuning of spin generation and relaxation regimes. Finally, we outline pathways toward programmable, multi-degree-of-freedom spin-orbitronic devices, such as reconfigurable spin diodes and orbital-torque memories, integrated within all-vdW architectures.