Aug 2026· International Conference on Embedded and Multimedia Computing· pp. 1-6· 0 citations· 17 references
Abstract
The characterization of power modules is currently limited by the intrusiveness of conventional voltage/current measurement methods, especially for Wide BandGap (WBG) components such as GaN or SiC. Near-field, contactless measurement techniques provide a relevant alternative, as they are non-invasive and suitable for measuring fast transient phenomena. However, reconstructing time-domain signals from near-field measurements requires precise knowledge of the time delay introduced by the probe. This condition is essential for accurate temporal alignment between the actual electrical quantities and the reconstructed signals. This paper proposes a calibration method for extracting and compensating the time delay of a near-field probe. The validity of the approach is demonstrated by the time-domain reconstruction of a current in a microstrip line and the reconstruction of the drain current of a GaN transistor during fast switching. The study also assesses the impact of probe-trace distance uncertainty on the reconstructed signal.
In recent years, the switching frequency of power converters has increased significantly with the widespread adoption of wide-bandgap power semiconductors. Conventional sensors, such as current transformers and Rogowski coils, are limited by their size and frequency bandwidth, making accurate current measurement diffic...
M. Miyamoto, M. Sonehara, T. Kubo et al.· Japanese Journal of Applied...· 0 citations
This paper presents a measurement method for the extraction of the effective common-source impedance of high-power SiC MOSFET modules under realistic switching conditions. Existing approaches are limited for high-power modules by excitation constraints, power requirements, and bandwidth limitations. The proposed method...
Felix Gesele, C. Bäumler, T. Basler et al.· 2026 Energy Conversion Congr...· 0 citations
The termination structure is regarded as a weak point of high-power semiconductor devices under blocking conditions. Measurement of the termination-region leakage current is highly beneficial for identifying the failure boundaries of devices under complex operating conditions, thereby enabling more effective guidance f...
Hong-Fan Zhu, Jia-Peng Liu, C. Ren et al.· 2026 Energy Conversion Congr...· 0 citations
Modern power converters are more based on Wide Bandgap (WBG) semiconductors, such as Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors (SiC MOSFETs). While SiC MOSFETs offer superior switching speeds and lower losses, their fast transients, in the order of tens of nanoseconds, pose significant challeng...
Dario Costanzo, A. Femine, G. Di Santo et al.· International Workshop on Ap...· 0 citations
To achieve high-efficiency operation in high-frequency GaN-based resonant DC-DC converters, precise Synchronous Rectification (SR) plays an important role. However, in the MHz switching frequency range, reliable and accurate zero-detection becomes significantly challenging. In this frequency range, conventional sensing...
Mohammad Mehdi Kashani, Oleksandr Husev, Daniel Sánchez et al.· 2026 IEEE 22nd International...· 0 citations
Gallium Nitride (GaN) transistors offer many advantages for power electronics converters, such as compact size and high-frequency operation. However, accurate loss estimation and calculation of the various losses in these transistors are generally more complicated compared to other power semiconductors due to the devic...
Yasser Yousefi Zandabad, J. Friebe· 2026 Energy Conversion Congr...· 0 citations
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