Dielectric Engineering for Sub-Nanometer Equivalent Oxide Thickness in Double-Gate WS2-FETs Using All-ALD-HfO2/ h -AlN Gate Stacks
This study reports a gate stack composed of an ultrathin epitaxial hexagonal aluminum nitride (h-AlN) interfacial layer (IL) deposited by plasma-enhanced atomic layer deposition (PEALD) between hafnium oxide (HfO2) and a monolayer tungsten disulfide (WS2) channel. The inherently inert surfaces of two-dimensional (2D)...