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Author

L. Ngô

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Oct 2026

Localization of Gate Oxide Defects within Pool Capacitors in NAND-type 3D Flash Memory

As NAND-type 3D Flash memory continues to scale in performance, speed, and storage density, the underlying architecture has grown significantly more complex. Global reference signals and clock networks must traverse large areas of the chip while driving numerous loads. A defect affecting even a single load can distur...

Xiao-Chen Zhu, L. Ngô, Mi-Mi Dang et al. · 0 citations

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