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M. Govinda

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Open access Nov 2026

Comparative Analysis and Genetic Algorithm Optimization of Multi-Transistor FinFET SRAM Topologies for SNM, Leakage, and Delay Improvement at 18nm

With continuous technology scaling, Static Random Access Memory (SRAM) faces significant challenges including increased leakage power, reduced stability, and higher delay. FinFET technology has emerged as a promising alternative to conventional CMOS technology due to its superior electrostatic control and reduced short...

M. Govinda, Mallikarjun C. Sarsamba, M. C. Parameshwara · 0 citations

Volume 5 Issue

Within these limits, the proposed cell is a suitable candidate for last-level cache and embedded memory in area- and power-constrained mobile system-on-chip applications.

M. Govinda, Mallikarjun C. Sarsamba, S. Mathad · 165 citations · ⚡3

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